Bhawani Shankar

Bhawani Shankar is a young scientist who did Masters in Electrical Engineering with specialization in Power Electronics, from Birla Institute of Technology and Science (BITS), Pilani, India in 2013. In 2014, he joined Electronic Systems Division at Central Electronics Engineering Research Institute (CSIR-CEERI), where he was engaged in design and development of 4H-SiC Schottky barrier diode. He obtained a Ph.D in GaN power device reliability at Indian Institute of Science, Bangalore, India. His research interest is reliability of power semiconductor devices under extreme conditions like high voltage, high current injection and electrostatic discharges (ESD). His present research focus is safe operating area reliability of AlGaN/GaN high electron mobility transistors (HEMTs) where his key contribution is the discovery of unique failure modes at the SOA boundary in AlGaN/GaN HEMTs. He is a creative mind with passion towards painting, poetry and astronomy.