Ke Zeng

Dr. Zeng received his Ph.D. and M.S. degrees in Electrical Engineering from the University at Buffalo - SUNY under the guidance of Dr. Uttam Singisetti. Previously a postdoctoral researcher in our lab at Stanford University, his research focuses on fabricating various high-power/performance electronic devices based on GaN and Ga2O3. His work emphasizes the use of novel edge termination techniques and device structures, as well as understanding the fundamental physics underlying these devices.