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Ph.D. Student (EE)

Nishita Sinha

Nishita (Nish) Sinha (she/they) is a current first-year Ph.D. student in the Wide Band Gap lab at Stanford University in the Department of Electrical Engineering. Prior to Stanford, Nish completed her undergraduate degree in Physics and Global Health and Health Policy at Harvard University. Nish's current research focuses on studying and modeling the physics of the diffusion of dopants in gallium nitride and gallium oxide to eventually make devices with more desirable and energy-efficient properties. Her goal is to use her research to build better semiconductor device infrastructure for renewable energy using wide bandgap materials.


B.S., Harvard University, 2022