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Rohith Soman Received his Ph.D. and ME from Indian Institute of Science (IISc), Bangalore, India. He worked on developing normally-off AlGaN/GaN HEMT devices for high power applications during Ph.D. His ME project was on developing gas sensors for detecting environmental hazardous gases. Currently, he is working on N-polar GaN vertical devices for high-frequency applications at Chowdhury group at Stanford.
Ph.D., Indian Institute of Science (IISc)